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Energy storage performance and phase transition under high

Lead-free antiferroelectric ceramics with high energy storage performance show great potential in pulsed power capacitors. However, poor

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Superior dielectric energy storage performance for high

New polyimides featuring alicyclic structures are designed to improve dielectric energy storage performance. the charge–discharge test demonstrated a remarkably stable cyclability over 100,000 cycles at 150 C under a high electric field of 400 MV/m,

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High-temperature all-organic energy storage dielectric with the performance of self-adjusting electric field distribution

As a key component of the dielectric capacitor, the dielectric material directly determines the performance of the capacitor. Poly(vinylidene fluoride) (PVDF) has received extensive attention for its large dielectric constant. However, PVDF has poor temperature resistance and cannot be used in high-temperatu

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Enhancing pulse energy-storage performance via strategy of

The deterioration of electrical performance for the polymer-based heterostructure at high temperature and high electric field limits its application. On the other hand, the practical use of the polymer-based capacitor still has a long way to go due to the small volume, low P m, low capacity and high research cost [ 11, 17 ].

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Ion Transport within High Electric Fields in Nanogap Electrochemical Cells

The experimental results are in excellent agreement with predictions from finite-element simulations coupling the governing equations for ion transport, electric fields, and the redox reactions. Double layer effects on ion transport are generally anticipated in highly confined electrolyte and may have implications for ion transport in thin layer and

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A strategy to achieve high energy storage performance under a

Abstract. Concerning the practical applications, dielectric capacitors with simultaneously high recoverable energy density (W rec) and large energy storage

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Novel transparent Eu and Hf co-doped AgNbO3 antiferroelectric ceramic with high-quality energy-storage performance

Low energy-storage density hinders the miniaturization of energy-storage devices. Therefore, improving the dielectric constant and field strength of dielectric materials has become a research focus for energy storage. In this study, a novel type of transparent AgNbO 3 antiferroelectric ceramic co-doped with Eu 3+ and Hf 4+

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A strategy to achieve high energy storage performance under a relatively low electric field

Ultra-high energy storage performance under low electric fields in Na 0.5 Bi 0.5 TiO 3-based relaxor ferroelectrics for pulse capacitor applications Ceram. Int., 46 ( 2020 ), pp. 98 - 105

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Enhanced High‐Temperature Energy Storage Performance of

The 0.25 vol% ITIC-polyimide/polyetherimide composite exhibits high-energy density and high discharge efficiency at 150 °C (2.9 J cm −3, 90%) and 180 °C

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High Energy Storage Performance in BiFeO3‐Based Lead‐Free High‐Entropy Ferroelectric

Dielectric capacitors are widely used in advanced electrical and electronic systems due to the rapid charge/discharge rates and high power density. High comprehensive energy storage properties are the ultimate ambition in the field of application achievements.

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Advances in Polymer Dielectrics with High Energy Storage

Much effort has been devoted to studying polymer dielectric capacitors and improving their capacitive performance, but their high conductivity and capacitance

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High Energy Storage Performance of All-Inorganic Flexible Antiferroelectric

With the increasingly high requirements for wearable and flexible devices, traditional inorganic capacitors cannot meet the flexible demand of next-generation electronic devices. In this work, the energy storage property of all-inorganic flexible films has been systematically studied. PbZrO3 (PZO) and Al2O3 (AO) are selected as the

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Realizing high energy storage performance in cost-cutting BiFeO

By virtue of the characteristics of low dielectric loss (tanδ) and large breakdown electric field of the SiO 2 layer, the BiFeO 3 /SiO 2 composite films achieve excellent energy storage performance. The optimal thickness of SiO 2 layer is the result of compromise between the breakdown electric field and the polarization intensity.

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Enhanced High‐Temperature Energy Storage Performance of All‐Organic Composite Dielectric

However, the energy storage efficiency (η) at high temperature of PI is relatively low (~10% at high temperatures and high fields). [ 37 - 40 ] Therefore, to further improve the energy storage efficiency of the composite dielectric, the organic semiconductor with high electron affinity ITIC is incorporated into PI. [ 31 ]

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Achieving High Energy Storage Performance under a Low Electric

The BNLST-0.2KN ceramic demonstrates a high recovered energy density (W rec ∼ 3.66 J/cm 3) and efficiency (η ∼ 85.8%) under a low electric field of 210

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Constructing phase boundary in AgNbO 3 antiferroelectrics: pathway simultaneously achieving high energy

Dielectric capacitors with high energy storage density ( Wrec) and efficiency ( η) are in great demand for high/pulsed power electronic systems, but the state-of-the-art lead-free

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Broad-high operating temperature range and enhanced energy

Herein, we rationally design an effective strategy to maintain high energy storage performance upon a wide working temperature range guided by the phase

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Achieving high energy storage performance and ultrafast

At z = 0.2, due to a high BDS, large P max, and low P r, a large W rec of 3.94 J/cm 3 and an ultrahigh η of 94.71% are simultaneously achieved at a high electric field of 390 kV/cm. Fig. 5 (d) gives the comparison of the

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Enhancing the high-temperature energy storage performance of PEI dielectric film through deposition of high-dielectric

We used AFM to investigate the relationship between the sputtering time and the composite films'' surface roughness. According to Fig. 4 a, the surface of the initial PEI film appeared smooth, exhibiting a surface roughness (RMS) of merely 1.5 nm g. 4 b–e demonstrate that the surface roughness of the PEI-1h PZT, PEI-1.5h PZT, PEI-2h

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Recent Advances in Multilayer‐Structure Dielectrics for Energy Storage

It is a well-known fact that the tanδ under high electric field mainly comes from the tunneling current, For a long time, PVDF and its binary and terpolymers have been used as substrates for designing high performance energy-storage dielectric because of ε r

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High-energy storage performance achieved in PbZrO3 thin films

The Pb(Zr 0.92 Li 0.08)O 3 ferroelectric films have excellent performance in breakdown electric field strength and energy storage density, but their energy storage efficiency is low. Reduced polarization loss and enhanced energy storage efficiency can be achieved by adjusting the degree of crystallization by annealing at a lower temperature.

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Achieving High Energy Storage Performance under a Low Electric Field

Ceramic capacitors have great potential for application in power systems due to their fantastic energy storage performance (ESP) and wide operating temperature range. In this study, the (1 - x)Bi0.5Na0.47Li0.03Sn0.01Ti0.99O3-xKNbO3 (BNLST-xKN) energy storage ceramics were synthesized through the solid-phase reaction method.

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Realizing high low-electric-field energy storage performance in

DOI: 10.1016/J.JMAT.2019.07.006 Corpus ID: 201293815 Realizing high low-electric-field energy storage performance in AgNbO3 ceramics by introducing relaxor behaviour Dielectric energy storage devices with high power density show

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High energy storage characteristics for Ba0.9Sr0.1TiO3 (BST)

The breakdown field strength (E b) of 0.3BST ceramics reached 445 kV/cm, an unexpectedly ultra-high energy storage density (W) of 4.48 J/cm 3 and a recoverable energy density (W rec) of 3.47 J/cm 3. In terms of charging and discharging performance, the ceramics have a low charging and discharging time of t 0.9 = 1.38 μs.

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Engineering relaxors by entropy for high energy storage

With the deliberate design of entropy, we achieve an optimal overall energy storage performance in Bi 4 Ti 3 O 12 -based medium-entropy films, featuring a

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Achieving high energy storage performance in BiFeO3@TiO2 filled PVDF-based composites with opposite double heterojunction via electric field

Achieving high energy storage performance in BiFeO 3 @TiO 2 filled PVDF-based composites with opposite double heterojunction via electric field tailoring Author links open overlay panel Lu Jing a, Weili Li a b,

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Stereoisomerically enhanced polynorbornene-imide dielectric energy storage performance

1. Introduction Dielectric polymers with flexibility, ease of processing, lightweight, high breakdown field strength and elegant failure mechanism have become the optimal choice for dielectric film capacitors [1], [2], widely employed in modern electronic and electrical systems for capacitance energy storage [3]..

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Improving the Energy Storage Performance of a Chlorinated Poly(vinyl chloride) Film at Elevated Electric Field

High energy density and efficiency are crucial factors for polymeric dielectrics to satisfy the emerging demand in high-pulse metallized film capacitors. However, achieving high energy density in polar polymeric dielectrics is usually accompanied by a sharp decline in the energy discharge efficiency at elevated electric

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Realizing high low-electric-field energy storage performance in AgNbO3 ceramics by introducing relaxor behaviour

In this work, a remarkably high Wrec of 2.9 J/cm3 accompanying with energy storage efficiency of 56% was achieved in Ag0.9Sr0.05NbO3 ceramic at a low applied electric field of 190 kV/cm, by

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High energy-storage performance and dielectric properties of antiferroelectric

Fig. 4 shows the P–E loops and field-dependent energy-storage performance of PLZST 50/44/6 at room temperature, which are measured at 100 Hz under different electric field. As shown, PLZST 50/44/6 displays a slim loop and the remnant polarization is small, so energy stored in ceramics can be effectively released.

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Realizing high low-electric-field energy storage performance in

In this work, a remarkably high Wrec of 2.9 J/cm3 accompanying with energy storage efficiency of 56% was achieved in Ag0.9Sr0.05NbO3 ceramic at a low applied electric field of 190 kV/cm, by improving anti-ferroelectricity and introducing relaxor behaviour.

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